Symposium CC
Functional Spin-Orbit Coupling Materials

Chair

  • Hsin LIN, National University of Singapore, Singapore

Co-Chairs

  • Yuan Ping FENG, National University of Singapore, Singapore
  • Arun BANSIL, Northeastern University, United States
  • Oliver RADER, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany
  • Vidya MADHAVAN, University of Illinois, Urbana-Champaign, United States

Correspondence

  • Dr Hsin Lin, National University of Singapore, Singapore
    Email: nilnish@gmail.com
    Tel: 6601 3643
    Mailing Address:
    Department of Physics, 2 Science Drive 3, S16-06-13, Singapore 117551

    Singapore

Scope of Symposium

This symposium will focus on materials with strong spin-orbit coupling as basis for advanced technologies, which are drawing intense current interest. Spin-orbit coupling in these materials drives novel quantum phenomena such as the existence of topologically interesting phases and spin split states in Rashba systems, providing potential new platforms for next generation electronics applications. Topics of interest include but are not limited to:

  • 2D materials and heterostructures
  • Giant Rashba systems
  • Spin/Valley electronics applications
  • Device simulation and fabrication
  • Z2 topological insulators and topological crystalline insulators
  • Topological superconductors and Majorana fermions
  • Experimental characterizations
 

Invited Speakers

  • Maria ASENSIO, Synchrotron SOLEIL, France
  • Arun BANSIL, Northeastern University, United States
  • Gustav BIHLMAYER, Forschunszentrum Jülich, Germany
  • Sergey BORISENKO, IFW Dresden, Germany
  • Alexandra CARVALHO, National University of Singapore, Singapore
  • Cui-Zu CHANG, Massachusetts Institute of Technology, United States
  • Ching-Tzu CHEN, IBM Thomas J Watson Research Center, United States
  • Hai-Ping CHENG, University of Florida, United States
  • Mei-Yin CHOU, Academia Sinica, Taiwan
  • Feng-Chuan CHUANG, National Sun Yat-Sen University, Taiwan
  • Zhong FANG, Institute of Physics, Chinese Academy of Sciences, China
  • Ke HE, Tsinghua Univeristy, China
  • Philip HOFMANN, Aarhus University, Denmark
  • Gengchiau LIANG, National University of Singapore, Singapore
  • Vidya MADHAVAN, University of Illinois, Urbana-Champaign, United States
  • Jouko NIEMINEN, Tampere University of Technology, Finland
  • Yoshinori OKADA, Tohoku University, Japan
  • Bart PARTOENS, University of Antwerp, Belgium
  • Oliver RADER, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany
  • Nitin SAMARTH, Penn State University, United States
  • Udo SCHWINGENSCHLOGL, King Abdullah University of Science & Technology, Saudi Arabia
  • Anjan SOUMYANARAYANAN, Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore
  • Takashi TAKAHASHI, Tohoku University, Japan
  • Andrei VARYKHALOV, Helmholtz-Zentrum Berlin, Germany
  • Lan WANG, RMIT University, Australia
  • Xue-Sen WANG, National University of Singapore, Singapore
  • Yugui YAO, Beijing Institute of Technology, China
  • Xingjiang ZHOU, Institute of Physics, Chinese Academy of Sciences, China