Symposium Y
Reliability and Variability of Devices for Circuits and Systems [RV-DCS]


  • Cher Ming TAN, Chang Gung University, Taiwan
  • Xing ZHOU, Nanyang Technological University, Singapore


  • Asen ASENOV, University of Glasgow, United Kingdom
  • Ulf SCHLICHTMANN, Technische Universität München, Germany
  • Hei WONG, City University of Hong Kong, Hong Kong SAR


  • Prof Cher Ming Tan, Chang Gung University, Taiwan
    Tel: +886-32118800 ext 5952
    Mailing Address:
    259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan, Taiwan, 333, R.O.C.
    Taoyuan, Taiwan 330

Scope of Symposium

Reliability and variability of semiconductor devices and integrated circuits are becoming major show-stoppers as the technology is scaled into the nanometer regime.  To sustain continued technology scaling, physical understanding and scalable models are needed for innovative aging/variation-aware design paradigms for future circuits/systems that are designed with reliability/variability being taken into consideration.  This symposium aims to provide an open forum for scientific exchange and latest developments ranging from atomic/quantum-level models to numerical/analytical/statistical device models for circuit/gate/system-level design and simulation.

Symposium Topics:

  • First-principle/atomic-level modeling of intrinsic device variability
  • Physics-based reliability models for circuit design and aging analysis
  • Statistical compact modeling and simulation for process/device/circuit variations
  • Electromigration, electrostatic discharge, mismatch/noise and thermal modeling
  • Numerical/analytical modeling of reliability/variability in emerging devices
  • Gate-level aging/variability modeling and simulation
  • Aging/variation-aware circuit/logic/system design approaches
  • Reliability/variability characterization and measurement techniques
  • Test structures and design for manufacturability, reliability, variability, and yield
  • System-level and interconnect reliability/variability issues
  • New design paradigms and scalable EDA tools for reliability/variability
Symposium History:

Symposium on RV-DCS at ICMAT2013:

Inaugural Symposium on RV-DCS at ICMAT2011:


All invited and contributed authors are invited to submit an extended full paper to the Microelectronic Reliability journal (Special Issue for ICMAT2015) for consideration of publication after the conference.

Invited Speakers

  • H.C. CHIU, Chang Gung University, Taiwan
  • Shurong DONG, Zhejiang University, China
  • Helmut GRAEB, Technische Universitaet Muenchen, Germany
  • Andreas HERKERSDORF, Technische Universitaet Muenchen, Germany
  • Chyuan-Haur KAO, Chang Gung University, Taiwan
  • Chao Sung LAI, Chang Gung University, Taiwan
  • Pei-Wen LI, National Chiao-Tung University, Taiwan
  • Kou-Chen LIU, Chang Gung University, Taiwan
  • Ming LIU, Institute of Microelectronics, Chinese Academy of Sciences, China
  • Matteo MENEGHINI, University of Padova, Italy
  • Subhasish MITRA, Stanford University, United States
  • Chandan SARKAR, Jadavpur University, India
  • Siegfried SELBERHERR, Technische Universität Wien, Austria
  • Yu-Lin SHEN, University of New Mexico, United States
  • Jason WOO, University of California, Los Angeles, United States
  • Cary YANG, Santa Clara University, United States