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Symposium M
Nanodevices and Nanofabrication


  • Qing ZHANG, Nanyang Technological University, Singapore


  • Bill MILNE, University of Cambridge, United Kingdom


  • Prof Qing Zhang, Nanyang Technological University, Singapore
    Email: eqzhang@ntu.edu.sg
    Tel: +65-67905061
    Fax: +65-67933318
    Mailing Address:
    50 Nanyang Avenue

    Singapore 639798

Scope of Symposium

A variety of devices at nanometer scale / molecular scale for electronic, photonics, optoelectronics, biological and mechanical applications have been created through a rapid development of materials and fabrication technology. Further development of such devices strongly depends on the state-of-the-art knowledge of science and technology at the sub-100nm length scale. This symposium in ICMAT2005, 2007, 2009 and 2011 had served as and it in ICMAT2013 will continue to serve as a platform on which the participants can share among themselves the recent advance in nanodevices and nanofabrication.

Symposium Topics
The objective of this symposium is to present up-to-date and highlights some of the key advances in the following topics:

  • Electronic and optoelectronic devices of nanometer scale / molecular scale
  • Nanomechanics and NEMS
  • Electromechanical coupled devices
  • Manipulation and aligning processes at nanometer scale / molecular scale
  • Quantum phenomena
  • Modeling of nanodevices and nanostructures
  • Fabrication and property characterization of nanodevices
  • Nanofabrication with focused beam technology, e.g., focused ion beam, laser and proton beam.

Invited Speakers

  • Stefano FABRIS, CNR‐IOM DEMOCRITOS Simulation Center and SISSA ‐ Scuola Internazionale Superiore di Studi, Italy ( Abstract )
  • Elise Yu-Tzu LI, Department of Chemistry, National Taiwan Normal University , Taiwan ( Abstract )
  • M. P. ANANTRAM, University of Washington, United States ( Abstract )
  • Victor E. BORISENKO, Belarusian State University of Informatics and Radioelectronics, Belarus ( Abstract )
  • Luis GARCIA-GANCEDO, University of Cambridge, United Kingdom ( Abstract )
  • Yoong Ahm KIM, Faculty of Engineering, Shinshu University, Japan ( Abstract )
  • Wu LU, Department of Electrical & Computer Engineering, 205 Dreese Laboratories, United States ( Abstract )
  • Gerardo MORELL, Department of Physics, University of Puerto Rico, United States ( Abstract )
  • Arash MOSTOFI, Department of Materials, Imperial College London, United Kingdom ( Abstract )
  • Shunri ODA, Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Japan ( Abstract )
  • Didier PRIBAT, Dept of Physics, Sungkyunkwan University, South Korea ( Abstract )
  • Din Ping TSAI, Research Centre for Applied Sciences, Taiwan ( Abstract )
  • Yonhua TZENG, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Taiwan ( Abstract )
  • Qing WAN, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, China ( Abstract )
  • Zuobin WANG , Centre for Nano Metrology and Manufacturing Technologies, Changchun University of Science and Technology, China ( Abstract )
  • Yuegang ZHANG, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China ( Abstract )
  • Weiguang ZHU , Nanyang Technological Unversity,, Singapore ( Abstract )